N-channel enhancement mode power MOSFET, 60V drain-source voltage, 25A continuous drain current. Features 3-pin D2PAK (TO-263) package with gull-wing leads for surface mounting. Offers 36mOhm maximum drain-source on-resistance at 10V Vgs. Operates from -55°C to 150°C with 39W maximum power dissipation.
PackageD2PAK
MountingSurface Mount
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Technical Specifications
Advanced Power Electronics AP9971S technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
TO-263
Package/Case
D2PAK
Package Description
Double Deca Watt Package
Lead Shape
Gull-wing
Pin Count
3
PCB
2
Tab
Tab
Package Material
Plastic
Mounting
Surface Mount
Configuration
Single
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain Source Voltage
60V
Maximum Gate Source Voltage
±20V
Maximum Continuous Drain Current
25A
Maximum Drain Source Resistance
36@10VmOhm
Typical Gate Charge @ Vgs
Typical Input Capacitance @ Vds
1700@25VpF
Maximum Power Dissipation
39000mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
EU RoHS
Yes
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Radiation Hardening
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Advanced Power Electronics AP9971S Datasheet
Download the complete datasheet for Advanced Power Electronics AP9971S to view detailed technical specifications.
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