N-channel enhancement mode power MOSFET, 60V drain-source voltage, 11A continuous drain current. Features 100mΩ maximum drain-source on-resistance at 10V Vgs, 6nC typical gate charge at 4.5V Vgs, and 485pF typical input capacitance at 25V Vds. Packaged in a 3-pin DPAK (TO-252AA) surface-mount plastic housing with gull-wing leads, measuring 6.5mm length, 5.7mm width, and 2.3mm height. Operates from -55°C to 150°C with a maximum power dissipation of 21W.
PackageDPAK
MountingSurface Mount
Quick Jump:
Technical Specifications
Advanced Power Electronics AP9977GH technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
TO-252
Package/Case
DPAK
Package Description
Deca Watt Package
Lead Shape
Gull-wing
Pin Count
3
PCB
2
Tab
Tab
Package Length (mm)
6.5
Package Width (mm)
5.7
Package Height (mm)
2.3
Seated Plane Height (mm)
2.4
Pin Pitch (mm)
2.3
Package Material
Plastic
Mounting
Surface Mount
Jedec
TO-252AA
Configuration
Single
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain Source Voltage
60V
Maximum Gate Source Voltage
±25V
Maximum Continuous Drain Current
11A
Maximum Drain Source Resistance
100@10VmOhm
Typical Gate Charge @ Vgs
Typical Input Capacitance @ Vds
485@25VpF
Maximum Power Dissipation
21000mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
EU RoHS
Yes
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Radiation Hardening
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Advanced Power Electronics AP9977GH Datasheet
Download the complete datasheet for Advanced Power Electronics AP9977GH to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.