N-channel enhancement mode power MOSFET featuring a 60V drain-source voltage and 11A continuous drain current. This single-element transistor is housed in a TO-251 package with 3 pins and a tab, designed for through-hole mounting. Key electrical characteristics include a maximum gate-source voltage of ±25V and a low drain-source on-resistance of 100mΩ at 10V. Operating across a wide temperature range from -55°C to 150°C, it offers a maximum power dissipation of 21000mW.
PackageTO-251
MountingThrough Hole
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Technical Specifications
Advanced Power Electronics AP9977GJ technical specifications.
General
Basic Package Type
Through Hole
Package Family Name
TO-251
Package/Case
TO-251
Package Description
Transistor Outline Package
Pin Count
3
PCB
3
Tab
Tab
Package Length (mm)
6.55
Package Width (mm)
2.3
Package Height (mm)
5.8
Pin Pitch (mm)
2.3
Package Material
Plastic
Mounting
Through Hole
Jedec
TO-251AB
Configuration
Single
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain Source Voltage
60V
Maximum Gate Source Voltage
±25V
Maximum Continuous Drain Current
11A
Maximum Drain Source Resistance
100@10VmOhm
Typical Gate Charge @ Vgs
Typical Input Capacitance @ Vds
485@25VpF
Maximum Power Dissipation
21000mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
EU RoHS
Yes
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Radiation Hardening
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Advanced Power Electronics AP9977GJ Datasheet
Download the complete datasheet for Advanced Power Electronics AP9977GJ to view detailed technical specifications.
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