N-channel enhancement mode power MOSFET with a maximum drain-source voltage of 60V and a continuous drain current of 165A. Features a low drain-source on-resistance of 3.5mΩ at 10V. This single-element transistor is housed in a TO-262 package with a through-hole mounting type. Operates within a temperature range of -55°C to 150°C.
PackageTO-262
MountingThrough Hole
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Technical Specifications
Advanced Power Electronics AP9992GR-HF technical specifications.
General
Basic Package Type
Through Hole
Package Family Name
I2PAK
Package/Case
TO-262
Package Description
Transistor Outline Package
Lead Shape
Through Hole
Pin Count
3
PCB
3
Tab
Tab
Package Material
Plastic
Mounting
Through Hole
Configuration
Single
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain Source Voltage
60V
Maximum Gate Source Voltage
±20V
Maximum Continuous Drain Current
165A
Maximum Gate Threshold Voltage
5V
Maximum Drain Source Resistance
3.5@10VmOhm
Typical Gate Charge @ Vgs
135@10VnC
Typical Gate Charge @ 10V
135nC
Typical Input Capacitance @ Vds
5500@25VpF
Maximum Power Dissipation
2000mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
EU RoHS
Yes
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Advanced Power Electronics AP9992GR-HF Datasheet
Download the complete datasheet for Advanced Power Electronics AP9992GR-HF to view detailed technical specifications.
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