N-channel enhancement mode power MOSFET with a maximum drain-source voltage of 60V and a continuous drain current of 165A. Features a low drain-source on-resistance of 3.5mΩ at 10V. This single-element transistor is housed in a TO-262 package with a through-hole mounting type. Operates within a temperature range of -55°C to 150°C.
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Advanced Power Electronics AP9992GR-HF technical specifications.
| Basic Package Type | Through Hole |
| Package Family Name | I2PAK |
| Package/Case | TO-262 |
| Package Description | Transistor Outline Package |
| Lead Shape | Through Hole |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Material | Plastic |
| Mounting | Through Hole |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 60V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 165A |
| Maximum Gate Threshold Voltage | 5V |
| Maximum Drain Source Resistance | 3.5@10VmOhm |
| Typical Gate Charge @ Vgs | 135@10VnC |
| Typical Gate Charge @ 10V | 135nC |
| Typical Input Capacitance @ Vds | 5500@25VpF |
| Maximum Power Dissipation | 2000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
| EU RoHS | Yes |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| RoHS Versions | 2011/65/EU, 2015/863 |
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