This device is an N-channel enhancement-mode power MOSFET rated for 60 V drain-to-source voltage and 100 A continuous drain current. It is housed in a TO-220 package and specifies 6 mΩ maximum on-resistance at 10 V gate drive and 40 A drain current. The transistor supports 125 W power dissipation at 25 °C case temperature and operates across a -55 °C to 175 °C junction temperature range. It is intended for low-voltage power applications such as DC/DC converters and is described as RoHS compliant and halogen-free.
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Advanced Power AP9990GP technical specifications.
| Channel Type | N-Channel |
| MOSFET Mode | Enhancement |
| Drain-Source Voltage | 60V |
| Continuous Drain Current (Chip) | 100A |
| Continuous Drain Current (Package Limited, Tc=25°C) | 80A |
| Continuous Drain Current (Tc=100°C) | 70A |
| Pulsed Drain Current | 300A |
| Power Dissipation (Tc=25°C) | 125W |
| On-Resistance RDS(on) | 6 maxmΩ |
| Gate Threshold Voltage | 2 to 5V |
| Total Gate Charge | 94 maxnC |
| Input Capacitance | 3700 maxpF |
| Junction Temperature Range | -55 to 175°C |
| Thermal Resistance Junction-to-Case | 1.2 max°C/W |
| RoHS | Compliant |
| Halogen Free | Yes |
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