High-frequency NPN RF power bipolar transistor designed for demanding applications. Features a single silicon element and operates across a high-frequency band. This 4-terminal radial device offers a maximum operating temperature of 150°C, ensuring reliable performance in challenging environments.
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Technical Specifications
Advanced Semiconductor MRF422 technical specifications.
General
Max Operating Temperature
150
Number of Terminals
4
Terminal Position
RADIAL
Pin Count
4
Number of Elements
1
Compliance
Eccn Code
EAR99
REACH
unknown
Military Spec
False
Datasheet
Advanced Semiconductor MRF422 Datasheet
Download the complete datasheet for Advanced Semiconductor MRF422 to view detailed technical specifications.
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