This N-channel trench MOSFET is rated for 30 V drain-source voltage and 54 A continuous drain current at TC = 25°C. It provides low on-resistance, with a maximum of 4.4 mΩ at VGS = 10 V and 6.5 mΩ at VGS = 4.5 V. The device is offered in a TO-252 DPAK package and supports pulsed drain current up to 200 A. Typical dynamic performance includes 28 nC total gate charge at 10 V, 1840 pF input capacitance, and 15 ns reverse recovery time. The junction and storage temperature range is -55°C to 175°C.
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Alpha and Omega Semiconductor AOD208 technical specifications.
| Drain-Source Voltage | 30V |
| Continuous Drain Current | 54A |
| Continuous Drain Current at 100°C Case | 42A |
| Pulsed Drain Current | 200A |
| Gate-Source Voltage | ±20V |
| On-Resistance at VGS=10V | 4.4 maxmΩ |
| On-Resistance at VGS=4.5V | 6.5 maxmΩ |
| Gate Threshold Voltage | 1.3 to 2.3V |
| Avalanche Current | 40A |
| Avalanche Energy | 80mJ |
| Power Dissipation at TC=25°C | 62W |
| Junction and Storage Temperature Range | -55 to 175°C |
| Input Capacitance | 1840 typpF |
| Output Capacitance | 720 typpF |
| Reverse Transfer Capacitance | 60 typpF |
| Total Gate Charge at 10V | 28 typnC |
| Total Gate Charge at 4.5V | 13 typnC |
| Reverse Recovery Time | 15 typns |
| Reverse Recovery Charge | 32 typnC |
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