This device is a 30 V N-channel power MOSFET in a TO-252 DPAK package. It is rated for 54 A continuous drain current at TC = 25°C and 42 A at TC = 100°C, with a maximum drain-source on-resistance of 4.4 mΩ at VGS = 10 V and 6.5 mΩ at VGS = 4.5 V. The datasheet text describes trench MOSFET technology optimized for efficient high-frequency switching and a soft-recovery body diode. The junction and storage temperature range is -55°C to 175°C, and maximum power dissipation is 62 W at TC = 25°C.
Checking distributor stock and pricing after the page loads.
Alpha and Omega Semiconductor AOI208 technical specifications.
| Channel Type | N-Channel |
| Drain-Source Voltage | 30V |
| Continuous Drain Current @ TC=25°C | 54A |
| Continuous Drain Current @ TC=100°C | 42A |
| Continuous Drain Current @ TA=25°C | 18A |
| Continuous Drain Current @ TA=70°C | 14A |
| Pulsed Drain Current | 200A |
| Gate-Source Voltage | ±20V |
| Drain-Source On-Resistance @ VGS=10V | 4.4 maxmΩ |
| Drain-Source On-Resistance @ VGS=4.5V | 6.5 maxmΩ |
| Power Dissipation @ TC=25°C | 62W |
| Junction and Storage Temperature Range | -55 to 175°C |
| Thermal Resistance Junction-to-Case | 2.4 max°C/W |
| Input Capacitance | 1840 typpF |
| Total Gate Charge @ VGS=10V | 28 typnC |
| Reverse Recovery Time | 15 typns |
