This device is a 30 V N-channel enhancement-mode power MOSFET in an Ultra SO-8 package. It uses advanced trench technology with a monolithically integrated Schottky diode to achieve low on-resistance and low gate charge. The MOSFET is rated for 85 A continuous drain current at 25 °C case temperature and supports operation up to 175 °C junction temperature. It is intended for low-side switching in SMPS, load-switching, and general-purpose power applications, and the datasheet identifies it as RoHS compliant and halogen- and antimony-free.
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Alpha and Omega Semiconductor AOL1700 technical specifications.
| Transistor Type | N-Channel Enhancement Mode MOSFET |
| Drain-Source Voltage | 30V |
| Gate-Source Voltage | ±20V |
| Continuous Drain Current @ Tc=25°C | 85A |
| Continuous Drain Current @ Tc=100°C | 81A |
| Pulsed Drain Current | 200A |
| Continuous Drain Current @ Ta=25°C | 17A |
| Continuous Drain Current @ Ta=70°C | 13A |
| Drain-Source On-Resistance @ Vgs=10V | 4.2 maxmΩ |
| Drain-Source On-Resistance @ Vgs=4.5V | 6.0 maxmΩ |
| Gate Threshold Voltage | 1.5 typV |
| Forward Transconductance | 90S |
| Input Capacitance | 4512pF |
| Output Capacitance | 682pF |
| Reverse Transfer Capacitance | 314pF |
| Total Gate Charge @ 10V | 74 maxnC |
| Total Gate Charge @ 4.5V | 35 maxnC |
| Reverse Recovery Time | 27 maxns |
| Maximum Junction Temperature | 175°C |
| RoHS | Compliant |
| Halogen Free | Yes |
| Antimony Free | Yes |
