This device is an N-channel enhancement-mode power MOSFET built with advanced trench technology and a monolithically integrated Schottky diode. It is rated for 30 V drain-source voltage and 65 A continuous drain current at 10 V gate drive, with low on-resistance of 4.2 mΩ maximum at 10 V and 5.5 mΩ maximum at 4.5 V. The device is intended for low-side switching in SMPS, load-switching, and general-purpose power applications. It is supplied in an Ultra SO-8 package and is identified as RoHS compliant and halogen- and antimony-free.
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Alpha and Omega Semiconductor AOL1712 technical specifications.
| Device Type | N-Channel Enhancement Mode Field Effect Transistor |
| Package | Ultra SO-8 |
| Drain-Source Voltage (VDS) | 30V |
| Gate-Source Voltage (VGS) | ±12V |
| Continuous Drain Current (ID) at TC=25°C | 65A |
| Continuous Drain Current (ID) at TA=25°C | 16A |
| Continuous Drain Current (ID) at TA=70°C | 12A |
| Pulsed Drain Current (IDM) | 80A |
| Avalanche Current (IAR) | 38A |
| Repetitive Avalanche Energy (EAR) | 217mJ |
| Junction and Storage Temperature Range | -55 to 175°C |
| Power Dissipation at TC=25°C | 100W |
| Power Dissipation at TC=100°C | 50W |
| Power Dissipation at TA=25°C | 2.1W |
| Power Dissipation at TA=70°C | 1.3W |
| Junction-to-Ambient Thermal Resistance (RθJA) Max | 25°C/W |
| Junction-to-Case Thermal Resistance (RθJC) Max | 1.5°C/W |
| Gate Threshold Voltage (VGS(th)) | 1.4 to 2.5V |
| On-State Drain Current (ID(ON)) | 80A |
| Drain-Source On-Resistance Max at VGS=10V, ID=20A | 4.2mΩ |
| Drain-Source On-Resistance Max at VGS=4.5V, ID=20A | 5.5mΩ |
| Forward Transconductance (gFS) Typ | 90S |
| Diode Forward Voltage Max | 0.5V |
| Input Capacitance (Ciss) Max | 5120pF |
| Output Capacitance (Coss) Typ | 590pF |
| Reverse Transfer Capacitance (Crss) Typ | 255pF |
| Gate Resistance Max | 1.1Ω |
| Total Gate Charge Max at 10V | 95nC |
| Body Diode Reverse Recovery Time Max | 43ns |
| Body Diode Reverse Recovery Charge Typ | 32nC |
| RoHS | Compliant |
| Halogen Free | Yes |
| Antimony Free | Yes |
