This device is a 60 V N-channel power MOSFET built with trench technology for high-frequency switching applications. It supports up to 85 A drain current at a 10 V gate drive and specifies maximum on-resistance of 4.7 mΩ at 10 V and 6.2 mΩ at 4.5 V. The part uses a surface-mount 8-DFN 5x6 package with exposed pad construction. The datasheet highlights low Crss and a soft-recovery body diode for boost converters, synchronous rectifiers, telecom and industrial power supplies, and LED backlighting.
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Alpha and Omega Semiconductor AON6244 technical specifications.
| FET Type | N-Channel |
| Drain-Source Voltage | 60V |
| Continuous Drain Current | 85A |
| On-Resistance @ VGS=10V | 4.7 maxmΩ |
| On-Resistance @ VGS=4.5V | 6.2 maxmΩ |
| Gate Threshold Voltage | 1.5 to 2.5V |
| Input Capacitance | 3838 typpF |
| Output Capacitance | 415 typpF |
| Reverse Transfer Capacitance | 14.5 typpF |
| Gate Resistance | 1 typΩ |
| Total Gate Charge @10V | 52 typnC |
| Total Gate Charge @4.5V | 21 typnC |
| Gate-Source Charge | 13.5 typnC |
| Gate-Drain Charge | 3 typnC |
| Forward Transconductance | 150 typS |
| Source-Drain Diode Voltage | 0.68 typ, 1 maxV |
| Mounting Type | Surface Mount |
| RoHS | Compliant |
Download the complete datasheet for Alpha and Omega Semiconductor AON6244 to view detailed technical specifications.
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