This device is a 30 V N-channel AlphaMOS power MOSFET in a DFN5x6 package. It supports up to 85 A continuous drain current at 10 V gate drive and 25 °C case temperature, with a maximum on-resistance of 2.1 mΩ at 10 V and 3.2 mΩ at 4.5 V. The MOSFET features low gate charge, with a typical total gate charge of 60 nC at 10 V and 28 nC at 4.5 V. It is intended for DC/DC converters in computing, servers, and point-of-load designs, as well as isolated DC/DC converters in telecom and industrial equipment. The operating junction and storage temperature range is -55 °C to 150 °C, and the device is RoHS and halogen-free compliant.
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Alpha and Omega Semiconductor AON6504 technical specifications.
| Drain-Source Voltage | 30V |
| Continuous Drain Current (TC=25°C) | 85A |
| Continuous Drain Current (TA=25°C) | 36A |
| Drain-Source On-Resistance @ VGS=10V | 2.1 maxmΩ |
| Drain-Source On-Resistance @ VGS=4.5V | 3.2 maxmΩ |
| Gate Threshold Voltage | 1.3 to 2.1V |
| Total Gate Charge @ VGS=10V | 60nC |
| Total Gate Charge @ VGS=4.5V | 28nC |
| Input Capacitance | 2719pF |
| Output Capacitance | 1204pF |
| Reverse Transfer Capacitance | 169pF |
| Power Dissipation (TC=25°C) | 100W |
| Avalanche Energy | 90mJ |
| Body Diode Reverse Recovery Time | 19.6ns |
| Thermal Resistance Junction-to-Case | 1.5°C/W |
| Thermal Resistance Junction-to-Ambient | 55°C/W |
| Operating Junction Temperature Range | -55 to 150°C |
| RoHS | Compliant |
| Halogen-free | Compliant |
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