This 30 V N-channel AlphaMOS power MOSFET is supplied in a DFN 5x6 package. It is rated for 32 A continuous drain current at VGS = 10 V and provides maximum RDS(on) of 4.4 mΩ at 10 V and 5.9 mΩ at 4.5 V. Total gate charge is 42 nC at 10 V and 20 nC at 4.5 V, with 2160 pF input capacitance. The device is RoHS and halogen-free compliant, supports avalanche operation, and is offered in tape-and-reel packaging with 3000-piece minimum order quantity.
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Alpha and Omega Semiconductor AON6510 technical specifications.
| Drain-Source Voltage | 30V |
| Continuous Drain Current (Tc=25°C) | 32A |
| Continuous Drain Current (Tc=100°C) | 25A |
| Continuous Drain Current (Ta=25°C) | 28A |
| Continuous Drain Current (Ta=70°C) | 22A |
| Pulsed Drain Current | 128A |
| Drain-Source On-Resistance (VGS=10V) | 4.4 maxmΩ |
| Drain-Source On-Resistance (VGS=4.5V) | 5.9 maxmΩ |
| Gate Threshold Voltage | 1.4 to 2.2V |
| Forward Transconductance | 91S |
| Input Capacitance | 2160pF |
| Output Capacitance | 915pF |
| Reverse Transfer Capacitance | 115pF |
| Total Gate Charge (VGS=10V) | 30 typ, 42 maxnC |
| Total Gate Charge (VGS=4.5V) | 14 typ, 20 maxnC |
| Gate-Source Charge | 5.1nC |
| Gate-Drain Charge | 6.3nC |
| Turn-On Delay Time | 8ns |
| Rise Time | 4ns |
| Turn-Off Delay Time | 29ns |
| Fall Time | 5.5ns |
| Body Diode Reverse Recovery Time | 16.5ns |
| Body Diode Reverse Recovery Charge | 34.2nC |
| Junction Temperature Range | -55 to 150°C |
| Junction-to-Case Thermal Resistance | 2.7 max°C/W |
| RoHS | Compliant |
| Halogen-free | Compliant |
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