This 30 V N-channel AlphaMOS power MOSFET is specified for up to 85 A continuous drain current at VGS = 10 V and low static on-resistance of 2.9 mΩ maximum at 10 V or 3.7 mΩ maximum at 4.5 V. It is offered in a DFN 5x6 package and supports a gate-source voltage range of ±12 V. The device has low gate charge, with total gate charge rated up to 65 nC at 10 V, and includes 100% UIS and Rg testing. Typical target applications include DC/DC converters in computing, servers, point-of-load supplies, and isolated converters for telecom and industrial systems. It is RoHS and halogen-free compliant.
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Alpha and Omega Semiconductor AON6554 technical specifications.
| Drain-Source Voltage | 30V |
| Continuous Drain Current @ VGS=10V, TC=25°C | 85A |
| Continuous Drain Current @ VGS=10V, TC=100°C | 66A |
| Continuous Drain Current @ TA=25°C | 36A |
| Continuous Drain Current @ TA=70°C | 28A |
| Pulsed Drain Current | 260A |
| Gate-Source Voltage | ±12V |
| Static Drain-Source On-Resistance @ VGS=10V | 2.9 maxmΩ |
| Static Drain-Source On-Resistance @ VGS=4.5V | 3.7 maxmΩ |
| Gate Threshold Voltage | 1.4 to 2.2V |
| Input Capacitance | 3020pF |
| Output Capacitance | 880pF |
| Reverse Transfer Capacitance | 140pF |
| Total Gate Charge @ VGS=10V | 65 maxnC |
| Total Gate Charge @ VGS=4.5V | 30 maxnC |
| Power Dissipation @ TC=25°C | 70W |
| Junction-to-Case Thermal Resistance | 1.8°C/W |
| Operating Junction and Storage Temperature Range | -55 to 150°C |
| Body Diode Reverse Recovery Time | 17.8ns |
| Body Diode Reverse Recovery Charge | 33nC |
| RoHS | Compliant |
| Halogen-free | Compliant |
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