This 30 V N-channel AlphaMOS device is intended for high-current switching in DC/DC converters, telecom, server, industrial, and point-of-load applications. It supports 85 A drain current at VGS = 10 V and provides low on-resistance of 1.8 mΩ maximum at 10 V or 3.3 mΩ maximum at 4.5 V. The device integrates a Schottky diode and has a typical total gate charge of 46.8 nC at 10 V, with typical capacitance values of 2796 pF input, 1200 pF output, and 165 pF reverse transfer. It is RoHS and halogen-free compliant and is specified as 100% UIS tested and 100% Rg tested.
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Alpha and Omega Semiconductor AON6754 technical specifications.
| Drain-Source Voltage | 30V |
| Continuous Drain Current | 85A |
| On-Resistance @ VGS=10V | 1.8 maxmΩ |
| On-Resistance @ VGS=4.5V | 3.3 maxmΩ |
| Gate Threshold Voltage | 1.4 to 2.4V |
| Forward Transconductance | 90S |
| Diode Forward Voltage | 0.39 typ, 0.6 maxV |
| Input Capacitance | 2796pF |
| Output Capacitance | 1200pF |
| Reverse Transfer Capacitance | 165pF |
| Gate Resistance | 1.5 typΩ |
| Total Gate Charge @ 10V | 46.8 typ, 64 maxnC |
| Total Gate Charge @ 4.5V | 22.3 typ, 30 maxnC |
| Gate-Source Charge | 8.4nC |
| Gate-Drain Charge | 8.6nC |
| Turn-On Delay Time | 9.5ns |
| Rise Time | 6.3ns |
| Turn-Off Delay Time | 35.8ns |
| Fall Time | 12.3ns |
| Reverse Recovery Time | 20ns |
| Reverse Recovery Charge | 40nC |
| Thermal Resistance Junction-to-Case | 1.5°C/W |
| Thermal Resistance Junction-to-Ambient | 55°C/W |
| RoHS | Yes |
| Halogen-free | Yes |
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