This device is a 30 V N-channel AlphaMOS power MOSFET with an integrated Schottky diode in a DFN 5x6 package. It supports 85 A continuous drain current at VGS = 10 V and specifies maximum on-resistance of 2.05 mΩ at 10 V and 3.15 mΩ at 4.5 V. The part features low gate charge, 3000 pF input capacitance, 58 A maximum body-diode continuous current, and 22 ns reverse recovery time. It is intended for DC/DC converters in computing, servers, point-of-load supplies, telecom, and industrial equipment. The junction and storage temperature range is -55 °C to 150 °C, and the device is RoHS and halogen-free compliant.
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Alpha and Omega Semiconductor AON6774 technical specifications.
| Drain-Source Voltage | 30V |
| Continuous Drain Current | 85A |
| On-Resistance @ VGS=10V | 2.05 maxmΩ |
| On-Resistance @ VGS=4.5V | 3.15 maxmΩ |
| Gate-Source Voltage | ±20V |
| Body-Diode Continuous Current | 58A |
| Gate Threshold Voltage | 1.4 to 2.2V |
| Forward Transconductance | 105S |
| Input Capacitance | 3000pF |
| Output Capacitance | 1280pF |
| Reverse Transfer Capacitance | 160pF |
| Total Gate Charge @ VGS=10V | 43nC |
| Gate-Source Charge | 7.7nC |
| Gate-Drain Charge | 7.5nC |
| Turn-On Delay Time | 11ns |
| Rise Time | 6ns |
| Turn-Off Delay Time | 38.5ns |
| Fall Time | 10ns |
| Reverse Recovery Time | 22ns |
| Reverse Recovery Charge | 42nC |
| Junction and Storage Temperature Range | -55 to 150°C |
| RoHS | Compliant |
| Halogen-free | Compliant |
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