N-channel AlphaSGT power MOSFET supports a 100 V drain-source rating and 122 A continuous drain current at 25 °C case temperature. The device has low on-resistance with maximum values of 6.2 mΩ at 10 V gate drive and 7.2 mΩ at 8 V gate drive in the TO-220 version. TO-220 tube packaging is specified for the orderable part, with an operating junction and storage temperature range from -55 °C to 175 °C.
Checking distributor stock and pricing after the page loads.
| FET Type | N-channel |
| Technology | AlphaSGT trench power MOSFET |
| Drain-Source Voltage | 100V |
| Continuous Drain Current at VGS=10V | 122A |
| Pulsed Drain Current | 310A |
| Gate-Source Voltage | ±20V |
| Static Drain-Source On-Resistance at 10V | 6.2 maxmΩ |
| Static Drain-Source On-Resistance at 8V | 7.2 maxmΩ |
| Gate Threshold Voltage | 2.3 min, 2.9 typ, 3.5 maxV |
| Forward Transconductance | 60 typS |
| Input Capacitance | 2685 typpF |
| Output Capacitance | 1465 typpF |
| Reverse Transfer Capacitance | 52 typpF |
| Total Gate Charge at 10V | 44 typ, 65 maxnC |
| Gate-Source Charge | 10 typnC |
| Gate-Drain Charge | 12 typnC |
| Turn-On Delay Time | 14 typns |
| Turn-On Rise Time | 18 typns |
| Turn-Off Delay Time | 32 typns |
| Turn-Off Fall Time | 22 typns |
| Body Diode Reverse Recovery Time | 43 typns |
| Junction and Storage Temperature Range | -55 to 175°C |
| RoHS | Compliant |
