This device is a 60 V N-channel MOSFET built with trench technology for high-frequency switching applications. It is rated for 51 A continuous drain current at 25 °C case temperature and specifies a maximum drain-source on-resistance of 6.5 mΩ at 10 V gate drive. The datasheet lists 53 nC typical total gate charge at 10 V, 4050 pF typical input capacitance, and 16.8 pF typical reverse transfer capacitance. It is intended for boost converters, synchronous rectifiers, consumer and telecom power supplies, industrial power supplies, and LED backlighting.
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Alpha and Omega Semiconductor AOWF2606 technical specifications.
| Transistor Type | N-Channel MOSFET |
| Drain-Source Voltage | 60V |
| Continuous Drain Current | 51A |
| Continuous Drain Current @ Tc=100°C | 36.5A |
| Gate-Source Voltage | ±20V |
| Drain-Source On-Resistance | 6.5 maxmΩ |
| Gate Threshold Voltage | 2.5 min / 3.0 typ / 3.5 maxV |
| Gate-Body Leakage Current | ±100nA |
| Forward Transconductance | 75S |
| Input Capacitance | 4050pF |
| Output Capacitance | 345pF |
| Reverse Transfer Capacitance | 16.8pF |
| Total Gate Charge @ 10V | 53 typ / 75 maxnC |
| Total Gate Charge @ 4.5V | 22 typ / 31 maxnC |
| Gate-Source Charge | 17nC |
| Gate-Drain Charge | 5nC |
| Turn-On Delay Time | 18ns |
| Turn-On Rise Time | 20ns |
| Turn-Off Delay Time | 33ns |
| Turn-Off Fall Time | 4ns |
| Reverse Recovery Time | 26ns |
| Reverse Recovery Charge | 125nC |
| Junction Temperature Range | -55 to 175°C |
| Thermal Resistance Junction-to-Case | 4.5°C/W |
| Thermal Resistance Junction-to-Ambient | 60°C/W |
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