Dual N-channel MOSFET uses trench MOSFET technology in an SO8 package for low on-resistance switching. The device is rated for 30 V drain-source voltage, 11 A continuous drain current at 25 °C, and 2 W power dissipation at 25 °C. Maximum on-resistance is 9.6 mΩ at 10 V gate drive and 13 mΩ at 4.5 V gate drive. It supports load switch and battery protection applications with a -55 °C to 150 °C junction and storage temperature range.
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| Configuration | Dual |
| Polarity | N-channel |
| Drain-source voltage | 30V |
| Gate-source voltage | ±20V |
| Continuous drain current at 25°C | 11A |
| Power dissipation at 25°C | 2W |
| On-resistance at VGS=10V | 9.6 maxmΩ |
| On-resistance at VGS=4.5V | 13 maxmΩ |
| Total gate charge at 10V | 18 typnC |
| Total gate charge at 4.5V | 8 typnC |
| Gate threshold voltage minimum | 1.5V |
| Gate threshold voltage typical | 2V |
| Gate threshold voltage maximum | 2.6V |
| Input capacitance | 1080 typpF |
| Output capacitance | 180 typpF |
| Reverse transfer capacitance | 110 typpF |
| Gate-drain charge | 3 typnC |
| Turn-on delay time | 6 typns |
| Turn-off delay time | 21 typns |
| Body diode reverse recovery time | 8.5 typns |
| Body diode reverse recovery charge | 13 typnC |
| Qualification | Industrial |
| Maximum junction temperature | 150°C |
| Package dimensions | 4.9 x 3.9 x 1.65mm |
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