N-Channel Power MOSFET, 55V Drain-Source Voltage, 2.1A Continuous Drain Current, and 160mΩ Max Rds On. This single-element silicon Metal-Oxide-Semiconductor FET features a 1.3V threshold voltage and 1.25W maximum power dissipation. Designed for surface mounting in a TO-236-3 package, it operates from -55°C to 150°C and includes fast switching times with a 2.3ns turn-on delay and 16.5ns turn-off delay. RoHS compliant and available in cut tape packaging.
PackageTO-236-3
MountingSurface Mount
Power1.25W
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Technical Specifications
Alpha & Omega AO3422 technical specifications.
General
Package/Case
TO-236-3
Continuous Drain Current (ID)
2.1A
Drain to Source Voltage (Vdss)
55V
Input Capacitance
300pF
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.25W
Mount
Surface Mount
Number of Elements
1
Packaging
Cut Tape
Power Dissipation
1.25W
Radiation Hardening
No
Rds On Max
160mR
RoHS Compliant
Yes
Threshold Voltage
1.3V
Turn-Off Delay Time
16.5ns
Turn-On Delay Time
2.3ns
Compliance
RoHS
Compliant
Datasheet
Alpha & Omega AO3422 Datasheet
Download the complete datasheet for Alpha & Omega AO3422 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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