N-Channel Power MOSFET, 55V Drain-Source Voltage, 2.1A Continuous Drain Current, and 160mΩ Max Rds On. This single-element silicon Metal-Oxide-Semiconductor FET features a 1.3V threshold voltage and 1.25W maximum power dissipation. Designed for surface mounting in a TO-236-3 package, it operates from -55°C to 150°C and includes fast switching times with a 2.3ns turn-on delay and 16.5ns turn-off delay. RoHS compliant and available in cut tape packaging.
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| Package/Case | TO-236-3 |
| Continuous Drain Current (ID) | 2.1A |
| Drain to Source Voltage (Vdss) | 55V |
| Input Capacitance | 300pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.25W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Packaging | Cut Tape |
| Power Dissipation | 1.25W |
| Radiation Hardening | No |
| Rds On Max | 160mR |
| RoHS Compliant | Yes |
| Threshold Voltage | 1.3V |
| Turn-Off Delay Time | 16.5ns |
| Turn-On Delay Time | 2.3ns |
| RoHS | Compliant |
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