N-channel enhancement mode power MOSFET, 100V drain-source voltage, 1A continuous drain current. Features a 3-pin SOT-23 surface-mount package with gull-wing leads, measuring 2.9mm x 1.6mm x 1mm. Offers a maximum drain-source on-resistance of 630mΩ at 10V, with typical gate charge of 2.8nC at 10V and input capacitance of 100pF at 50V. Maximum power dissipation is 1400mW, operating temperature range from -55°C to 150°C.
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| Basic Package Type | Lead-Frame SMT |
| Package Family Name | SOT |
| Package/Case | SOT-23 |
| Package Description | Small Outline Transistor |
| Lead Shape | Gull-wing |
| Pin Count | 3 |
| PCB | 3 |
| Package Length (mm) | 2.9 |
| Package Width (mm) | 1.6 |
| Package Height (mm) | 1 |
| Seated Plane Height (mm) | 1.25(Max) |
| Pin Pitch (mm) | 0.95 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 100V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 1A |
| Maximum Gate Threshold Voltage | 2.9V |
| Maximum Drain Source Resistance | 630@10VmOhm |
| Typical Gate Charge @ Vgs | 2.8@10V|[email protected]nC |
| Typical Gate Charge @ 10V | 2.8nC |
| Typical Input Capacitance @ Vds | 100@50VpF |
| Maximum Power Dissipation | 1400mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
| Cage Code | 6USE7 |
| EU RoHS | Yes |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| RoHS Versions | 2011/65/EU, 2015/863 |
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