N-channel enhancement mode power MOSFET featuring 30V drain-source voltage and 18A continuous drain current. This surface-mount device is housed in an 8-pin SOIC (Small Outline IC) package with gull-wing leads, measuring 4.9mm in length and 3.9mm in width. Key electrical characteristics include a maximum drain-source on-resistance of 5.5mOhm at 10V gate-source voltage, typical gate charge of 37nC at 10V, and typical input capacitance of 1910pF at 15V drain-source voltage. Maximum power dissipation is 3100mW, with an operating temperature range of -55°C to 150°C.
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| Basic Package Type | Lead-Frame SMT |
| Package Family Name | SOP |
| Package/Case | SOIC |
| Package Description | Small Outline IC |
| Lead Shape | Gull-wing |
| Pin Count | 8 |
| PCB | 8 |
| Package Length (mm) | 4.9 |
| Package Width (mm) | 3.9 |
| Package Height (mm) | 1.5 |
| Seated Plane Height (mm) | 1.65 |
| Pin Pitch (mm) | 1.27 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Jedec | MS-012AA |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 30V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 18A |
| Maximum Drain Source Resistance | 5.5@10VmOhm |
| Typical Gate Charge @ Vgs | 37@10V|[email protected]nC |
| Typical Gate Charge @ 10V | 37nC |
| Typical Input Capacitance @ Vds | 1910@15VpF |
| Maximum Power Dissipation | 3100mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
| Cage Code | 6USE7 |
| EU RoHS | Yes |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| RoHS Versions | 2011/65/EU, 2015/863 |
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