
N-channel enhancement mode power MOSFET featuring a 60V drain-source voltage and 23A continuous drain current. This single-element transistor offers a low 19mΩ drain-source resistance at 10V Vgs and a 2.5V gate threshold voltage. Packaged in a surface-mount D2PAK (TO-263) with 3 pins, it supports a maximum power dissipation of 41.5W and operates across a wide temperature range of -55°C to 175°C.
Alpha & Omega AOB2618L technical specifications.
| Basic Package Type | Lead-Frame SMT |
| Package Family Name | TO-263 |
| Package/Case | D2PAK |
| Pin Count | 3 |
| PCB | 2 |
| Tab | Tab |
| Package Length (mm) | 10.03 |
| Package Width (mm) | 9.14 |
| Package Height (mm) | 4.45 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 60V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 23A |
| Maximum Gate Threshold Voltage | 2.5V |
| Maximum Drain Source Resistance | 19@10VmOhm |
| Typical Gate Charge @ Vgs | 14@10V|[email protected]nC |
| Typical Gate Charge @ 10V | 14nC |
| Typical Input Capacitance @ Vds | 950@30VpF |
| Maximum Power Dissipation | 41500mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 175°C |
| Cage Code | 6USE7 |
| EU RoHS | Yes with Exemption |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| RoHS Versions | 2011/65/EU, 2015/863 |
Download the complete datasheet for Alpha & Omega AOB2618L to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.