N-channel enhancement mode power MOSFET in a D2PAK surface-mount package. Features a maximum drain-source voltage of 100V and a continuous drain current of 90A. Offers a low drain-source on-resistance of 7.8mOhm at 10V. Operates across a temperature range of -55°C to 175°C.
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Alpha & Omega AOB410 technical specifications.
| Basic Package Type | Lead-Frame SMT |
| Package Family Name | TO-263 |
| Package/Case | D2PAK |
| Pin Count | 3 |
| PCB | 2 |
| Tab | Tab |
| Package Length (mm) | 10.03 |
| Package Width (mm) | 9.14 |
| Package Height (mm) | 4.45 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 100V |
| Maximum Gate Source Voltage | ±25V |
| Maximum Continuous Drain Current | 90A |
| Maximum Drain Source Resistance | 7.8@10VmOhm |
| Typical Gate Charge @ Vgs | 93.6@10VnC |
| Typical Gate Charge @ 10V | 93.6nC |
| Typical Input Capacitance @ Vds | 5782@50VpF |
| Maximum Power Dissipation | 150000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 175°C |
| Cage Code | 6USE7 |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Radiation Hardening | No |
| RoHS Versions | 2002/95/EC |
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