N-channel enhancement mode power MOSFET in a surface-mount DPAK (TO-252) package. Features a 500V drain-source voltage, 2.8A continuous drain current, and 3000mΩ drain-source resistance at 10V. Typical gate charge is 6.7nC at 10V, with input capacitance of 276pF at 25V. Maximum power dissipation is 57W, operating temperature range from -50°C to 150°C.
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| Package Family Name | TO-252 |
| Package/Case | DPAK |
| Package Description | Deca Watt Package |
| Pin Count | 3 |
| PCB | 2 |
| Tab | Tab |
| Package Length (mm) | 6.6 |
| Package Width (mm) | 6.1 |
| Package Height (mm) | 2.29 |
| Pin Pitch (mm) | 2.29 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 500V |
| Maximum Gate Source Voltage | ±30V |
| Maximum Continuous Drain Current | 2.8A |
| Maximum Drain Source Resistance | 3000@10VmOhm |
| Typical Gate Charge @ Vgs | 6.7@10VnC |
| Typical Gate Charge @ 10V | 6.7nC |
| Typical Input Capacitance @ Vds | 276@25VpF |
| Maximum Power Dissipation | 57000mW |
| Min Operating Temperature | -50°C |
| Max Operating Temperature | 150°C |
| Cage Code | 6USE7 |
| EU RoHS | Yes with Exemption |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
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