N-channel enhancement mode power MOSFET in a surface-mount DPAK (TO-252) package. Features a 500V drain-source voltage, 2.8A continuous drain current, and 3000mΩ drain-source resistance at 10V. Typical gate charge is 6.7nC at 10V, with input capacitance of 276pF at 25V. Maximum power dissipation is 57W, operating temperature range from -50°C to 150°C.
PackageDPAK
MountingSurface Mount
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Technical Specifications
Alpha & Omega AOD3N50 technical specifications.
General
Package Family Name
TO-252
Package/Case
DPAK
Package Description
Deca Watt Package
Pin Count
3
PCB
2
Tab
Tab
Package Length (mm)
6.6
Package Width (mm)
6.1
Package Height (mm)
2.29
Pin Pitch (mm)
2.29
Package Material
Plastic
Mounting
Surface Mount
Configuration
Single
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain Source Voltage
500V
Maximum Gate Source Voltage
±30V
Maximum Continuous Drain Current
2.8A
Maximum Drain Source Resistance
3000@10VmOhm
Typical Gate Charge @ Vgs
6.7@10VnC
Typical Gate Charge @ 10V
6.7nC
Typical Input Capacitance @ Vds
276@25VpF
Maximum Power Dissipation
57000mW
Min Operating Temperature
-50°C
Max Operating Temperature
150°C
Compliance
Cage Code
6USE7
EU RoHS
Yes with Exemption
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Radiation Hardening
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Alpha & Omega AOD3N50 Datasheet
Download the complete datasheet for Alpha & Omega AOD3N50 to view detailed technical specifications.
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