N-channel enhancement mode power MOSFET in a 3-pin DPAK (TO-252) surface-mount plastic package. Features a maximum drain-source voltage of 600V and a continuous drain current of 2.5A. Offers a low drain-source on-resistance of 3500 mOhm at 10V. Maximum power dissipation is 56800 mW, with an operating temperature range of -50°C to 150°C.
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| Package Family Name | TO-252 |
| Package/Case | DPAK |
| Package Description | Deca Watt Package |
| Pin Count | 3 |
| PCB | 2 |
| Tab | Tab |
| Package Length (mm) | 6.6 |
| Package Width (mm) | 6.1 |
| Package Height (mm) | 2.29 |
| Pin Pitch (mm) | 2.29 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 600V |
| Maximum Gate Source Voltage | ±30V |
| Maximum Continuous Drain Current | 2.5A |
| Maximum Drain Source Resistance | 3500@10VmOhm |
| Typical Gate Charge @ Vgs | 9.9@10VnC |
| Typical Gate Charge @ 10V | 9.9nC |
| Typical Input Capacitance @ Vds | 304@25VpF |
| Maximum Power Dissipation | 56800mW |
| Min Operating Temperature | -50°C |
| Max Operating Temperature | 150°C |
| Cage Code | 6USE7 |
| EU RoHS | Yes with Exemption |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
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