N-channel enhancement mode power MOSFET in a 3-pin DPAK (TO-252) surface-mount plastic package. Features a maximum drain-source voltage of 600V and a continuous drain current of 2.5A. Offers a low drain-source on-resistance of 3500 mOhm at 10V. Maximum power dissipation is 56800 mW, with an operating temperature range of -50°C to 150°C.
PackageDPAK
MountingSurface Mount
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Technical Specifications
Alpha & Omega AOD3N60 technical specifications.
General
Package Family Name
TO-252
Package/Case
DPAK
Package Description
Deca Watt Package
Pin Count
3
PCB
2
Tab
Tab
Package Length (mm)
6.6
Package Width (mm)
6.1
Package Height (mm)
2.29
Pin Pitch (mm)
2.29
Package Material
Plastic
Mounting
Surface Mount
Configuration
Single
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain Source Voltage
600V
Maximum Gate Source Voltage
±30V
Maximum Continuous Drain Current
2.5A
Maximum Drain Source Resistance
3500@10VmOhm
Typical Gate Charge @ Vgs
9.9@10VnC
Typical Gate Charge @ 10V
9.9nC
Typical Input Capacitance @ Vds
304@25VpF
Maximum Power Dissipation
56800mW
Min Operating Temperature
-50°C
Max Operating Temperature
150°C
Compliance
Cage Code
6USE7
EU RoHS
Yes with Exemption
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Radiation Hardening
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Alpha & Omega AOD3N60 Datasheet
Download the complete datasheet for Alpha & Omega AOD3N60 to view detailed technical specifications.
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