P-Channel MOSFET for power applications. Features 60V drain-to-source voltage and 12A continuous drain current. Offers a low 115mΩ Rds(on) at 10V Vgs. Encased in a TO-252 (DPAK-3) surface-mount package. Operates across a wide temperature range from -55°C to 175°C with a maximum power dissipation of 50W.
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| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 12A |
| Drain to Source Voltage (Vdss) | 60V |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 1.185nF |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 50W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Packaging | Tape and Reel |
| Power Dissipation | 2.5W |
| Rds On Max | 115mR |
| RoHS Compliant | Yes |
| RoHS | Compliant |
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