P-channel enhancement mode power MOSFET, surface mountable in a 6-pin DFN EP package with exposed pad. Features a maximum drain-source voltage of 20V and continuous drain current of 4A. Offers low on-resistance of 58mΩ at 4.5V Vgs and a maximum power dissipation of 1800mW. Operates across a temperature range of -55°C to 150°C.
PackageDFN EP
MountingSurface Mount
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Technical Specifications
Alpha & Omega AON1611 technical specifications.
General
Basic Package Type
Non-Lead-Frame SMT
Package Family Name
DFN
Package/Case
DFN EP
Package Description
Dual Flat Package No Lead, Exposed Pad
Lead Shape
No Lead
Pin Count
6
PCB
6
Package Length (mm)
1.6
Package Width (mm)
1.6
Package Height (mm)
0.55(Max)
Seated Plane Height (mm)
0.55
Pin Pitch (mm)
0.5
Package Material
Plastic
Mounting
Surface Mount
Configuration
Single
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
P
Number of Elements per Chip
1
Maximum Drain Source Voltage
20V
Maximum Gate Source Voltage
±8V
Maximum Continuous Drain Current
4A
Maximum Gate Threshold Voltage
0.9V
Maximum Drain Source Resistance
Typical Gate Charge @ Vgs
Typical Input Capacitance @ Vds
550@10VpF
Maximum Power Dissipation
1800mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
6USE7
EU RoHS
Yes
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Alpha & Omega AON1611 Datasheet
Download the complete datasheet for Alpha & Omega AON1611 to view detailed technical specifications.
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