N-channel enhancement mode power MOSFET featuring a 30V drain-source voltage and 8A continuous drain current. This single-element transistor is housed in a compact 2mm x 2mm x 0.55mm DFN-B EP package with 6 pins for surface mounting. Key specifications include a maximum drain-source on-resistance of 11.7 mOhm at 10V, typical gate charge of 8.9 nC at 10V, and typical input capacitance of 552 pF at 15V. Operating across a temperature range of -55°C to 150°C, this component offers a maximum power dissipation of 2800 mW.
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| Package/Case | DFN-B EP |
| Pin Count | 6 |
| PCB | 6 |
| Package Length (mm) | 2 |
| Package Width (mm) | 2 |
| Package Height (mm) | 0.55(Max) |
| Seated Plane Height (mm) | 0.55 |
| Pin Pitch (mm) | 0.65 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Configuration | Single Quad Drain |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Process Technology | AlphaMOS |
| Maximum Drain Source Voltage | 30V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 8A |
| Maximum Gate Threshold Voltage | 2.2V |
| Maximum Drain Source Resistance | 11.7@10VmOhm |
| Typical Gate Charge @ Vgs | 8.9@10V|[email protected]nC |
| Typical Gate Charge @ 10V | 8.9nC |
| Typical Input Capacitance @ Vds | 552@15VpF |
| Maximum Power Dissipation | 2800mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
| Cage Code | 6USE7 |
| EU RoHS | Yes with Exemption |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| RoHS Versions | 2011/65/EU, 2015/863 |
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