N-channel enhancement mode power MOSFET featuring a 30V drain-source voltage and 8A continuous drain current. This single-element transistor is housed in a compact 2mm x 2mm x 0.55mm DFN-B EP package with 6 pins for surface mounting. Key specifications include a maximum drain-source on-resistance of 11.7 mOhm at 10V, typical gate charge of 8.9 nC at 10V, and typical input capacitance of 552 pF at 15V. Operating across a temperature range of -55°C to 150°C, this component offers a maximum power dissipation of 2800 mW.
PackageDFN-B EP
MountingSurface Mount
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Technical Specifications
Alpha & Omega AON2420 technical specifications.
General
Package/Case
DFN-B EP
Pin Count
6
PCB
6
Package Length (mm)
2
Package Width (mm)
2
Package Height (mm)
0.55(Max)
Seated Plane Height (mm)
0.55
Pin Pitch (mm)
0.65
Package Material
Plastic
Mounting
Surface Mount
Configuration
Single Quad Drain
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Process Technology
AlphaMOS
Maximum Drain Source Voltage
30V
Maximum Gate Source Voltage
±20V
Maximum Continuous Drain Current
8A
Maximum Gate Threshold Voltage
2.2V
Maximum Drain Source Resistance
11.7@10VmOhm
Typical Gate Charge @ Vgs
8.9@10V|[email protected]nC
Typical Gate Charge @ 10V
8.9nC
Typical Input Capacitance @ Vds
552@15VpF
Maximum Power Dissipation
2800mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
6USE7
EU RoHS
Yes with Exemption
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Alpha & Omega AON2420 Datasheet
Download the complete datasheet for Alpha & Omega AON2420 to view detailed technical specifications.
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