N-Channel Power MOSFET, 80V Vds, 50A continuous drain current, and 8.5mΩ Rds(on). Features a 1-element silicon Metal-Oxide-Semiconductor FET design with a DFN-8 package for surface mounting. Offers a maximum power dissipation of 83W and operates within a temperature range of -55°C to 150°C. This component is RoHS compliant and lead-free.
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| Package/Case | DFN EP |
| Continuous Drain Current (ID) | 50A |
| Drain to Source Voltage (Vdss) | 80V |
| Input Capacitance | 1.871nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 6.3W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Cut Tape |
| Power Dissipation | 83W |
| Radiation Hardening | No |
| Rds On Max | 8.5mR |
| RoHS Compliant | Yes |
| RoHS | Compliant |
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