N-channel enhancement mode power MOSFET, 60V drain-source voltage, 33A continuous drain current. Features 22mOhm maximum drain-source resistance at 10V, with typical gate charge of 28nC at 10V and 1680pF input capacitance at 30V. Housed in an 8-pin DFN-A EP package (3x3x0.78mm) for surface mounting, offering a single quad drain triple source configuration. Operates across a wide temperature range from -55°C to 150°C with a maximum power dissipation of 42000mW.
PackageDFN-A EP
MountingSurface Mount
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Technical Specifications
Alpha & Omega AON7444 technical specifications.
General
Package/Case
DFN-A EP
Pin Count
8
PCB
8
Package Length (mm)
3
Package Width (mm)
3
Package Height (mm)
0.78
Seated Plane Height (mm)
0.8
Pin Pitch (mm)
0.65
Package Material
Plastic
Mounting
Surface Mount
Configuration
Single Quad Drain Triple Source
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain Source Voltage
60V
Maximum Gate Source Voltage
±20V
Maximum Continuous Drain Current
33A
Maximum Drain Source Resistance
22@10VmOhm
Typical Gate Charge @ Vgs
28@10V|[email protected]nC
Typical Gate Charge @ 10V
28nC
Typical Input Capacitance @ Vds
1680@30VpF
Maximum Power Dissipation
42000mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
6USE7
EU RoHS
Yes with Exemption
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Radiation Hardening
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Alpha & Omega AON7444 Datasheet
Download the complete datasheet for Alpha & Omega AON7444 to view detailed technical specifications.
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