N-channel enhancement mode power MOSFET, 60V drain-source voltage, 33A continuous drain current. Features 22mOhm maximum drain-source resistance at 10V, with typical gate charge of 28nC at 10V and 1680pF input capacitance at 30V. Housed in an 8-pin DFN-A EP package (3x3x0.78mm) for surface mounting, offering a single quad drain triple source configuration. Operates across a wide temperature range from -55°C to 150°C with a maximum power dissipation of 42000mW.
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Alpha & Omega AON7444 technical specifications.
| Package/Case | DFN-A EP |
| Pin Count | 8 |
| PCB | 8 |
| Package Length (mm) | 3 |
| Package Width (mm) | 3 |
| Package Height (mm) | 0.78 |
| Seated Plane Height (mm) | 0.8 |
| Pin Pitch (mm) | 0.65 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Configuration | Single Quad Drain Triple Source |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 60V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 33A |
| Maximum Drain Source Resistance | 22@10VmOhm |
| Typical Gate Charge @ Vgs | 28@10V|[email protected]nC |
| Typical Gate Charge @ 10V | 28nC |
| Typical Input Capacitance @ Vds | 1680@30VpF |
| Maximum Power Dissipation | 42000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
| Cage Code | 6USE7 |
| EU RoHS | Yes with Exemption |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
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