N-channel enhancement mode power MOSFET in an 8-pin DFN-A EP package. Features a 30V maximum drain-source voltage and 34A maximum continuous drain current. Offers a low 4mOhm maximum drain-source resistance at 10V. Surface mountable with a compact 3x3x0.78mm footprint. Supports a wide operating temperature range from -55°C to 150°C.
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Alpha & Omega AON7522E technical specifications.
| Package/Case | DFN-A EP |
| Pin Count | 8 |
| PCB | 8 |
| Package Length (mm) | 3 |
| Package Width (mm) | 3 |
| Package Height (mm) | 0.78 |
| Seated Plane Height (mm) | 0.8 |
| Pin Pitch (mm) | 0.65 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Configuration | Single Quad Drain Triple Source |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 30V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 34A |
| Maximum Gate Threshold Voltage | 2.2V |
| Maximum Drain Source Resistance | 4@10VmOhm |
| Typical Gate Charge @ Vgs | 33.4@10V|[email protected]nC |
| Typical Gate Charge @ 10V | 33.4nC |
| Typical Input Capacitance @ Vds | 1540@15VpF |
| Maximum Power Dissipation | 31000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
| Cage Code | 6USE7 |
| EU RoHS | Yes |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| RoHS Versions | 2011/65/EU, 2015/863 |
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