N-channel enhancement mode power MOSFET in a TO-220 package, featuring a 60V drain-source voltage and 7A continuous drain current. This single-element transistor offers a low 19mΩ drain-source resistance at 10V Vgs and a maximum power dissipation of 41.5W. With a 2.5V gate threshold voltage and typical gate charge of 14nC at 10V, it is designed for through-hole mounting. The TO-220 package measures 10.03mm in length, 4.45mm in width, and 9.14mm in height, with a 2.54mm pin pitch.
PackageTO-220
MountingThrough Hole
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Technical Specifications
Alpha & Omega AOT2618L technical specifications.
General
Package/Case
TO-220
Package Description
Transistor Outline Package
Pin Count
3
PCB
3
Tab
Tab
Package Length (mm)
10.03
Package Width (mm)
4.45
Package Height (mm)
9.14
Seated Plane Height (mm)
19.7(Max)
Pin Pitch (mm)
2.54
Package Material
Plastic
Mounting
Through Hole
Configuration
Single
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain Source Voltage
60V
Maximum Gate Source Voltage
±20V
Maximum Continuous Drain Current
7A
Maximum Gate Threshold Voltage
2.5V
Maximum Drain Source Resistance
19@10VmOhm
Typical Gate Charge @ Vgs
14@10V|[email protected]nC
Typical Gate Charge @ 10V
14nC
Typical Input Capacitance @ Vds
950@30VpF
Maximum Power Dissipation
41500mW
Min Operating Temperature
-55°C
Max Operating Temperature
175°C
Compliance
Cage Code
6USE7
EU RoHS
Yes with Exemption
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Alpha & Omega AOT2618L Datasheet
Download the complete datasheet for Alpha & Omega AOT2618L to view detailed technical specifications.
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