N-channel enhancement mode power MOSFET featuring a 500V maximum drain-source voltage and 3A continuous drain current. This single-element transistor is housed in a TO-220 package with 3 pins and a tab, designed for through-hole mounting. Key specifications include a maximum power dissipation of 74W, a maximum drain-source on-resistance of 3000mΩ at 10V, and a typical gate charge of 6.7nC at 10V. Operating temperature range is -55°C to 150°C.
PackageTO-220
MountingThrough Hole
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Technical Specifications
Alpha & Omega AOT3N50 technical specifications.
General
Package/Case
TO-220
Package Description
Transistor Outline Package
Pin Count
3
PCB
3
Tab
Tab
Package Length (mm)
10.03
Package Width (mm)
4.45
Package Height (mm)
9.14
Seated Plane Height (mm)
19.7(Max)
Pin Pitch (mm)
2.54
Package Material
Plastic
Mounting
Through Hole
Configuration
Single
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain Source Voltage
500V
Maximum Gate Source Voltage
±30V
Maximum Continuous Drain Current
3A
Maximum Drain Source Resistance
3000@10VmOhm
Typical Gate Charge @ Vgs
6.7@10VnC
Typical Gate Charge @ 10V
6.7nC
Typical Input Capacitance @ Vds
276@25VpF
Maximum Power Dissipation
74000mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
6USE7
EU RoHS
Yes with Exemption
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Radiation Hardening
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Alpha & Omega AOT3N50 Datasheet
Download the complete datasheet for Alpha & Omega AOT3N50 to view detailed technical specifications.
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