N-channel enhancement mode power MOSFET featuring 650V drain-source voltage and 8A continuous drain current. This single-element transistor is housed in a 3-pin TO-220 package with a tab, designed for through-hole mounting. Key specifications include a maximum drain-source resistance of 1150 mOhm at 10V and a typical gate charge of 23.5 nC at 10V. Maximum power dissipation is 208W, with an operating temperature range of -55°C to 150°C.
PackageTO-220
MountingThrough Hole
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Technical Specifications
Alpha & Omega AOT8N65 technical specifications.
General
Package/Case
TO-220
Package Description
Transistor Outline Package
Pin Count
3
PCB
3
Tab
Tab
Package Length (mm)
10.03
Package Width (mm)
4.45
Package Height (mm)
9.14
Seated Plane Height (mm)
19.7(Max)
Pin Pitch (mm)
2.54
Package Material
Plastic
Mounting
Through Hole
Configuration
Single
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain Source Voltage
650V
Maximum Gate Source Voltage
±30V
Maximum Continuous Drain Current
8A
Maximum Drain Source Resistance
1150@10VmOhm
Typical Gate Charge @ Vgs
23.5@10VnC
Typical Gate Charge @ 10V
23.5nC
Typical Input Capacitance @ Vds
1165@25VpF
Maximum Power Dissipation
208000mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
6USE7
EU RoHS
Yes with Exemption
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Radiation Hardening
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Alpha & Omega AOT8N65 Datasheet
Download the complete datasheet for Alpha & Omega AOT8N65 to view detailed technical specifications.
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