N-channel enhancement mode power MOSFET featuring 800V drain-source voltage and 7.4A continuous drain current. This single-element transistor is housed in a TO-220 package with through-hole mounting. Key specifications include a maximum gate-source voltage of ±30V, a gate threshold voltage of 4.5V, and a low drain-source on-resistance of 1630mΩ at 10V. Operating temperature range spans from -55°C to 150°C, with a maximum power dissipation of 245W.
PackageTO-220
MountingThrough Hole
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Technical Specifications
Alpha & Omega AOT8N80L technical specifications.
General
Package/Case
TO-220
Package Description
Transistor Outline Package
Pin Count
3
PCB
3
Tab
Tab
Package Length (mm)
10.03
Package Width (mm)
4.45
Package Height (mm)
9.14
Mounting
Through Hole
Configuration
Single
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain Source Voltage
800V
Maximum Gate Source Voltage
±30V
Maximum Continuous Drain Current
7.4A
Maximum Gate Threshold Voltage
4.5V
Maximum Drain Source Resistance
1630@10VmOhm
Typical Gate Charge @ Vgs
26@10VnC
Typical Gate Charge @ 10V
26nC
Typical Input Capacitance @ Vds
1375@25VpF
Maximum Power Dissipation
245000mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
6USE7
EU RoHS
Yes with Exemption
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Alpha & Omega AOT8N80L Datasheet
Download the complete datasheet for Alpha & Omega AOT8N80L to view detailed technical specifications.
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