N-channel enhancement mode power MOSFET featuring 800V drain-source voltage and 7.4A continuous drain current. This single-element transistor is housed in a TO-220 package with through-hole mounting. Key specifications include a maximum gate-source voltage of ±30V, a gate threshold voltage of 4.5V, and a low drain-source on-resistance of 1630mΩ at 10V. Operating temperature range spans from -55°C to 150°C, with a maximum power dissipation of 245W.
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Alpha & Omega AOT8N80L technical specifications.
| Package/Case | TO-220 |
| Package Description | Transistor Outline Package |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 10.03 |
| Package Width (mm) | 4.45 |
| Package Height (mm) | 9.14 |
| Mounting | Through Hole |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 800V |
| Maximum Gate Source Voltage | ±30V |
| Maximum Continuous Drain Current | 7.4A |
| Maximum Gate Threshold Voltage | 4.5V |
| Maximum Drain Source Resistance | 1630@10VmOhm |
| Typical Gate Charge @ Vgs | 26@10VnC |
| Typical Gate Charge @ 10V | 26nC |
| Typical Input Capacitance @ Vds | 1375@25VpF |
| Maximum Power Dissipation | 245000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
| Cage Code | 6USE7 |
| EU RoHS | Yes with Exemption |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| RoHS Versions | 2011/65/EU, 2015/863 |
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