Power Field-Effect Transistor, 11A I(D), 600V, 0.399ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220F, 3 PIN
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Alpha & Omega AOTF11S60 technical specifications.
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 11A |
| Drain to Source Voltage (Vdss) | 600V |
| Input Capacitance | 545pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 38W |
| Mount | Through Hole |
| Packaging | Rail/Tube |
| Rds On Max | 399mR |
| RoHS Compliant | Yes |
| Series | aMOS™ |
| RoHS | Compliant |
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