N-channel enhancement mode power MOSFET featuring a 1000V maximum drain-source voltage and 4A maximum continuous drain current. This single-element transistor is housed in a TO-220F package with 3 through-hole pins and a tab, offering a 4200 mOhm maximum drain-source resistance at 10V. Operating across a wide temperature range of -55°C to 150°C, it boasts a maximum power dissipation of 42000mW.
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Alpha & Omega AOTF5N100 technical specifications.
| Basic Package Type | Through Hole |
| Package Family Name | TO-220 |
| Package/Case | TO-220F |
| Package Description | Transistor Outline Package Fullpak |
| Lead Shape | Through Hole |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 10.16 |
| Package Width (mm) | 4.7 |
| Package Height (mm) | 15.87 |
| Seated Plane Height (mm) | 19.1 |
| Pin Pitch (mm) | 2.54 |
| Package Material | Plastic |
| Mounting | Through Hole |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 1000V |
| Maximum Gate Source Voltage | ±30V |
| Maximum Continuous Drain Current | 4A |
| Maximum Gate Threshold Voltage | 4.5V |
| Maximum Drain Source Resistance | 4200@10VmOhm |
| Typical Gate Charge @ Vgs | 19@10VnC |
| Typical Gate Charge @ 10V | 19nC |
| Typical Input Capacitance @ Vds | 950@25VpF |
| Maximum Power Dissipation | 42000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
| Cage Code | 6USE7 |
| EU RoHS | Yes with Exemption |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| RoHS Versions | 2011/65/EU, 2015/863 |
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