RF Power MOSFET, N-channel enhancement mode, designed for high-frequency applications. Features a 135V drain-source voltage rating and a 4-terminal configuration with dual terminal positions. This transistor incorporates two active elements for enhanced performance.
Quick Jump:
Technical Specifications
Ampleon BLF183XRU technical specifications.
General
Number of Terminals
4
Terminal Position
DUAL
Number of Elements
2
Compliance
RoHS
Yes
Eccn Code
EAR99
REACH
unknown
Military Spec
False
Datasheet
Ampleon BLF183XRU Datasheet
Download the complete datasheet for Ampleon BLF183XRU to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.