RF Power MOSFET, N-channel enhancement mode, designed for high-frequency applications. Features a 135V drain-source voltage rating and a 4-terminal configuration with dual terminal positions. This transistor incorporates two active elements for enhanced performance.
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Technical Specifications
Ampleon BLF183XRU technical specifications.
General
| Number of Terminals | 4 |
| Terminal Position | DUAL |
| Number of Elements | 2 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| REACH | unknown |
| Military Spec | False |
Datasheet
Ampleon BLF183XRU Datasheet
Download the complete datasheet for Ampleon BLF183XRU to view detailed technical specifications.
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