Ultra High Frequency Band, N-Channel Silicon Metal-oxide Semiconductor FET, featuring a 2-element configuration and a 4-terminal ceramic package with dual terminal positions. This ROHS compliant RF small signal field-effect transistor is designed for high-frequency applications.
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Technical Specifications
Ampleon BLF188XRU technical specifications.
General
Number of Terminals
4
Terminal Position
DUAL
Number of Elements
2
Compliance
RoHS
Yes
Eccn Code
EAR99
REACH
unknown
Military Spec
False
Datasheet
Ampleon BLF188XRU Datasheet
Download the complete datasheet for Ampleon BLF188XRU to view detailed technical specifications.
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