N-channel RF FET transistor with a 65V drain-source voltage and 32A continuous drain current. Features a 5-pin LDMOST ceramic package, suitable for screw mounting. Operates from 1MHz to 1300MHz with a typical power gain of 18dB and 100W typical output power. Supports 2-tone Class-AB and CW Class-AB modes of operation, with a wide temperature range of -65°C to 200°C.
PackageLDMOST
MountingScrew
Power100(Typ)W
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Technical Specifications
Ampleon BLF645,112 technical specifications.
General
Package/Case
LDMOST
Pin Count
5
PCB
5
Package Length (mm)
34.16(Max)
Package Width (mm)
10.91(Max)
Package Height (mm)
5.77(Max)
Package Material
Ceramic
Mounting
Screw
Channel Type
N
Configuration
Dual Common Source
Channel Mode
Enhancement
Number of Elements per Chip
2
Maximum Drain Source Voltage
65V
Maximum Continuous Drain Current
32A
Minimum Frequency
1MHz
Maximum Frequency
1300MHz
Min Operating Temperature
-65°C
Max Operating Temperature
200°C
Mode of Operation
2-Tone Class-AB|CW Class-AB
Typical Power Gain
18dB
Output Power
100(Typ)W
Typical Input Capacitance @ Vds
69@32VpF
Compliance
EU RoHS
Yes
HTS Code
8541290075
ECCN
EAR99
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Ampleon BLF645,112 Datasheet
Download the complete datasheet for Ampleon BLF645,112 to view detailed technical specifications.
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