N-channel RF FET transistor in a 5-pin CDFM ceramic package, designed for high-power applications. Features a maximum drain-source voltage of 65V and operates across a frequency range of 10MHz to 1500MHz. This dual common source, enhancement mode transistor delivers up to 200W output power with typical power gain up to 19dB. Suitable for pulsed RF, Class-AB, CW Class-B, and 2-tone Class-AB modes of operation, with a wide operating temperature range from -65°C to 200°C. Mounting is via screw, and it offers a typical input capacitance of 78pF at 32V.
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| Package/Case | CDFM |
| Pin Count | 5 |
| PCB | 5 |
| Package Length (mm) | 34.16(Max) |
| Package Width (mm) | 9.91(Max) |
| Package Height (mm) | 4.75(Max) |
| Package Material | Ceramic |
| Mounting | Screw |
| Channel Type | N |
| Configuration | Dual Common Source |
| Channel Mode | Enhancement |
| Number of Elements per Chip | 2 |
| Maximum Drain Source Voltage | 65V |
| Minimum Frequency | 10MHz |
| Maximum Frequency | 1500MHz |
| Min Operating Temperature | -65°C |
| Max Operating Temperature | 200°C |
| Mode of Operation | Pulsed RF|Class-AB|CW Class-B|2-Tone Class-AB |
| Typical Power Gain | 18|18|18|19dB |
| Output Power | 200W |
| Typical Input Capacitance @ Vds | 78@32VpF |
| EU RoHS | Yes |
| HTS Code | 8541290075 |
| ECCN | EAR99 |
| RoHS Versions | 2011/65/EU, 2015/863 |
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