N-channel RF FET transistor in a 5-pin CDFM ceramic package, designed for high-power applications. Features a maximum drain-source voltage of 65V and operates across a frequency range of 10MHz to 1500MHz. This dual common source, enhancement mode transistor delivers up to 200W output power with typical power gain up to 19dB. Suitable for pulsed RF, Class-AB, CW Class-B, and 2-tone Class-AB modes of operation, with a wide operating temperature range from -65°C to 200°C. Mounting is via screw, and it offers a typical input capacitance of 78pF at 32V.
PackageCDFM
MountingScrew
Power200W
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Technical Specifications
Ampleon BLF647P,112 technical specifications.
General
Package/Case
CDFM
Pin Count
5
PCB
5
Package Length (mm)
34.16(Max)
Package Width (mm)
9.91(Max)
Package Height (mm)
4.75(Max)
Package Material
Ceramic
Mounting
Screw
Channel Type
N
Configuration
Dual Common Source
Channel Mode
Enhancement
Number of Elements per Chip
2
Maximum Drain Source Voltage
65V
Minimum Frequency
10MHz
Maximum Frequency
1500MHz
Min Operating Temperature
-65°C
Max Operating Temperature
200°C
Mode of Operation
Pulsed RF|Class-AB|CW Class-B|2-Tone Class-AB
Typical Power Gain
18|18|18|19dB
Output Power
200W
Typical Input Capacitance @ Vds
78@32VpF
Compliance
EU RoHS
Yes
HTS Code
8541290075
ECCN
EAR99
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Ampleon BLF647P,112 Datasheet
Download the complete datasheet for Ampleon BLF647P,112 to view detailed technical specifications.
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