N-channel RF FET transistor, surface mount, in a 5-pin CDFM ceramic package. Features a maximum drain-source voltage of 65V, operating from 10MHz to 1500MHz. Delivers 200W output power with typical power gain up to 19dB across multiple operating modes including Pulsed RF and Class-AB. Designed for dual common source configuration with enhancement mode channel.
PackageCDFM
MountingSurface Mount
Power200W
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Technical Specifications
Ampleon BLF647PS,112 technical specifications.
General
Package/Case
CDFM
Pin Count
5
PCB
5
Package Length (mm)
20.7(Max)
Package Width (mm)
9.91(Max)
Package Height (mm)
4.75(Max)
Package Material
Ceramic
Mounting
Surface Mount
Channel Type
N
Configuration
Dual Common Source
Channel Mode
Enhancement
Number of Elements per Chip
2
Maximum Drain Source Voltage
65V
Minimum Frequency
10MHz
Maximum Frequency
1500MHz
Min Operating Temperature
-65°C
Max Operating Temperature
200°C
Mode of Operation
Pulsed RF|Class-AB|CW Class-B|2-Tone Class-AB
Typical Power Gain
18|18|18|19dB
Output Power
200W
Typical Input Capacitance @ Vds
78@32VpF
Compliance
EU RoHS
Yes
HTS Code
8541290075
ECCN
EAR99
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Ampleon BLF647PS,112 Datasheet
Download the complete datasheet for Ampleon BLF647PS,112 to view detailed technical specifications.
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