N-channel RF FET transistor, surface mount, in a 5-pin CDFM ceramic package. Features a maximum drain-source voltage of 65V, operating from 10MHz to 1500MHz. Delivers 200W output power with typical power gain up to 19dB across multiple operating modes including Pulsed RF and Class-AB. Designed for dual common source configuration with enhancement mode channel.
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| Package/Case | CDFM |
| Pin Count | 5 |
| PCB | 5 |
| Package Length (mm) | 20.7(Max) |
| Package Width (mm) | 9.91(Max) |
| Package Height (mm) | 4.75(Max) |
| Package Material | Ceramic |
| Mounting | Surface Mount |
| Channel Type | N |
| Configuration | Dual Common Source |
| Channel Mode | Enhancement |
| Number of Elements per Chip | 2 |
| Maximum Drain Source Voltage | 65V |
| Minimum Frequency | 10MHz |
| Maximum Frequency | 1500MHz |
| Min Operating Temperature | -65°C |
| Max Operating Temperature | 200°C |
| Mode of Operation | Pulsed RF|Class-AB|CW Class-B|2-Tone Class-AB |
| Typical Power Gain | 18|18|18|19dB |
| Output Power | 200W |
| Typical Input Capacitance @ Vds | 78@32VpF |
| EU RoHS | Yes |
| HTS Code | 8541290075 |
| ECCN | EAR99 |
| RoHS Versions | 2011/65/EU, 2015/863 |
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