The BLF6G10LS-200,118 is a single-channel, enhancement-mode RF transistor with a maximum drain source voltage of 65V and maximum continuous drain current of 49mA. It operates over a temperature range of -65°C to 225°C and is packaged in a ceramic SOT-502B surface mount package. The transistor is designed for use in 2-carrier W-CDMA applications and has a typical power gain of 20.2 dB and an output power of 40W. It is suitable for use in high-frequency applications with a minimum operating frequency of 800 MHz and a maximum frequency of 1000 MHz.
PackageSOT-502B
MountingSurface Mount
Power40(Typ)W
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Technical Specifications
Ampleon BLF6G10LS-200,118 technical specifications.
General
| Package/Case | SOT-502B |
| Pin Count | 3 |
| PCB | 3 |
| Package Length (mm) | 20.7(Max) |
| Package Width (mm) | 9.91(Max) |
| Package Height (mm) | 4.72(Max) |
| Package Material | Ceramic |
| Mounting | Surface Mount |
| Channel Type | N |
| Configuration | Single |
| Channel Mode | Enhancement |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 65V |
| Maximum Continuous Drain Current | 49A |
| Minimum Frequency | 800MHz |
| Maximum Frequency | 1000MHz |
| Min Operating Temperature | -65°C |
| Max Operating Temperature | 225°C |
| Mode of Operation | 2-Carrier W-CDMA |
| Typical Power Gain | 20.2dB |
| Output Power | 40(Typ)W |
Compliance
| EU RoHS | Yes |
| ECCN | EAR99 |
| RoHS Versions | 2002/95/EC |
Datasheet
Ampleon BLF6G10LS-200,118 Datasheet
Download the complete datasheet for Ampleon BLF6G10LS-200,118 to view detailed technical specifications.
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