RF FET N-Channel transistor, single enhancement mode, designed for high-frequency applications up to 860 MHz. Features a maximum drain-source voltage of 104V and operates in 2-Tone Class-AB or DVB-T modes. This 3-pin LDMOST package, with ceramic material and screw mounting, offers a typical power gain of 21 dB and 140W typical output power. Operating temperature range spans from -65°C to 200°C, with a typical input capacitance of 100pF at 50V.
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| Package/Case | LDMOST |
| Pin Count | 3 |
| PCB | 3 |
| Package Length (mm) | 20.45(Max) |
| Package Width (mm) | 5.97(Max) |
| Package Height (mm) | 4.67(Max) |
| Package Material | Ceramic |
| Mounting | Screw |
| Channel Type | N |
| Configuration | Single |
| Channel Mode | Enhancement |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 104V |
| Minimum Frequency | 1MHz |
| Maximum Frequency | 860MHz |
| Min Operating Temperature | -65°C |
| Max Operating Temperature | 200°C |
| Mode of Operation | 2-Tone Class-AB|DVB-T |
| Typical Power Gain | 21dB |
| Output Power | 140(Typ)W |
| Typical Input Capacitance @ Vds | 100@50VpF |
| EU RoHS | Yes |
| HTS Code | 8541290075 |
| ECCN | EAR99 |
| RoHS Versions | 2011/65/EU, 2015/863 |
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