RF FET N-Channel transistor, single enhancement mode, designed for high-frequency applications up to 860 MHz. Features a maximum drain-source voltage of 104V and operates in 2-Tone Class-AB or DVB-T modes. This 3-pin LDMOST package, with ceramic material and screw mounting, offers a typical power gain of 21 dB and 140W typical output power. Operating temperature range spans from -65°C to 200°C, with a typical input capacitance of 100pF at 50V.
PackageLDMOST
MountingScrew
Power140(Typ)W
Quick Jump:
Technical Specifications
Ampleon BLF881,112 technical specifications.
General
Package/Case
LDMOST
Pin Count
3
PCB
3
Package Length (mm)
20.45(Max)
Package Width (mm)
5.97(Max)
Package Height (mm)
4.67(Max)
Package Material
Ceramic
Mounting
Screw
Channel Type
N
Configuration
Single
Channel Mode
Enhancement
Number of Elements per Chip
1
Maximum Drain Source Voltage
104V
Minimum Frequency
1MHz
Maximum Frequency
860MHz
Min Operating Temperature
-65°C
Max Operating Temperature
200°C
Mode of Operation
2-Tone Class-AB|DVB-T
Typical Power Gain
21dB
Output Power
140(Typ)W
Typical Input Capacitance @ Vds
100@50VpF
Compliance
EU RoHS
Yes
HTS Code
8541290075
ECCN
EAR99
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Ampleon BLF881,112 Datasheet
Download the complete datasheet for Ampleon BLF881,112 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.