Ultra High Frequency Band RF Power Field-Effect Transistor, a 2-element N-Channel Silicon Metal-oxide Semiconductor FET. Features a 4-terminal ceramic package with dual terminal position. ROHS COMPLIANT.
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Technical Specifications
Ampleon BLF884P,112 technical specifications.
General
Number of Terminals
4
Terminal Position
DUAL
Number of Elements
2
Compliance
RoHS
Yes
Eccn Code
EAR99
REACH
unknown
Military Spec
False
Datasheet
Ampleon BLF884P,112 Datasheet
Download the complete datasheet for Ampleon BLF884P,112 to view detailed technical specifications.
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