BLF888A-112

A dual common source UHF LDMOS RF power transistor operates across a 470–860 MHz frequency range, delivering a nominal output power of 600 W at 1 dB compression and 120 W average output power for DVB-T 8k OFDM signals. It exhibits a typical power gain of 20 dB at 858 MHz and 50 V, with a typical drain efficiency of 31% under the same conditions. Engineered for high reliability, it features ≥ 40:1 VSWR withstand ruggedness across all phases and a low typical thermal resistance of 0.15 K/W (junction–case), alongside a 110 V drain–source voltage rating. Typical capacitance values include 220 pF input, 1.2 pF reverse transfer, and 74 pF output at 50 V, providing -31 dBc intermodulation shoulder attenuation for DVB-T at 858 MHz. Encapsulated in a SOT539A (ACC-1230) flanged balanced ceramic package with 2 mounting holes and 4 leads, it supports bolt/screw-down mounting to a heatsink and is designed for a maximum junction temperature of 225 °C. RoHS and REACH compliant, handling guidelines for its Air Cavity Ceramic package should be observed.