Ampleon
BLF888AS
RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, CERAMIC PACKAGE-4
RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, CERAMIC PACKAGE-4
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Technical Specifications
Ampleon BLF888AS technical specifications.
General
| Number of Terminals | 4 |
| Terminal Position | DUAL |
| Number of Elements | 2 |
Compliance
| Eccn Code | EAR99 |
| REACH | unknown |
| Military Spec | False |
Datasheet
Ampleon BLF888AS Datasheet
Download the complete datasheet for Ampleon BLF888AS to view detailed technical specifications.
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