The BLF888B,112 is a dual N-channel RF transistor with a maximum drain source voltage of 104V and a maximum frequency of 860MHz. It has a typical power gain of 21 and an output power of 250mW. The transistor is packaged in a ceramic SOT-539A package, which is mounted using screws. It operates over a temperature range of -65°C to 200°C and is suitable for use in 2-tone class-AB mode.
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| Package/Case | SOT-539A |
| Pin Count | 5 |
| PCB | 5 |
| Package Length (mm) | 41.28(Max) |
| Package Width (mm) | 10.29(Max) |
| Package Height (mm) | 4.7(Max) |
| Package Material | Ceramic |
| Mounting | Screw |
| Channel Type | N |
| Configuration | Dual Common Source |
| Channel Mode | Enhancement |
| Number of Elements per Chip | 2 |
| Maximum Drain Source Voltage | 104V |
| Minimum Frequency | 470MHz |
| Maximum Frequency | 860MHz |
| Min Operating Temperature | -65°C |
| Max Operating Temperature | 200°C |
| Mode of Operation | 2-Tone Class-AB |
| Typical Power Gain | 21dB |
| Output Power | 250(Min)W |
| Typical Input Capacitance @ Vds | 210@50VpF |
| EU RoHS | Yes |
| HTS Code | 8541290075 |
| ECCN | EAR99 |
| RoHS Versions | 2011/65/EU, 2015/863 |
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