
The BLF8G10LS-160V,118 is a single-channel, enhancement-mode RF transistor from Ampleon. It features a ceramic package with a surface-mount configuration and operates within a temperature range of -65°C to 200°C. The device has a maximum drain-source voltage of 65V and a typical power gain of 20dBm. It is suitable for 2-carrier W-CDMA applications and has a maximum output power of 35dBm.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Ampleon BLF8G10LS-160V,118 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
| Package/Case | CDFM |
| Pin Count | 7 |
| PCB | 7 |
| Package Length (mm) | 20.7(Max) |
| Package Width (mm) | 9.91(Max) |
| Package Height (mm) | 4.75(Max) |
| Package Material | Ceramic |
| Mounting | Surface Mount |
| Channel Type | N |
| Configuration | Single |
| Channel Mode | Enhancement |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 65V |
| Minimum Frequency | 925MHz |
| Maximum Frequency | 960MHz |
| Min Operating Temperature | -65°C |
| Max Operating Temperature | 200°C |
| Mode of Operation | 2-Carrier W-CDMA |
| Typical Power Gain | 20dB |
| Output Power | 35(Typ)W |
| EU RoHS | Yes |
| HTS Code | 8541290075 |
| ECCN | EAR99 |
| RoHS Versions | 2011/65/EU, 2015/863 |
Download the complete datasheet for Ampleon BLF8G10LS-160V,118 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.